Graphene in proximity to magnetic insulating LaMnO{sub 3}

Journal Article · Mon Sep 29 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4897224· OSTI ID:22350820

Cheng, Guanghui; Wei, Laiming; Cheng, Long; Liang, Haixing; Zhang, Xiaoqiang; Li, Hui ^[1]; Yu, Guolin ^[2]; Zeng, Changgan ^[1]

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1. Hefei National Laboratory for Physical Sciences at the Microscale (HFNL) and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)
2. Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083 (China)

Proximity to functional substrates may enhance the coupling between the quantum degrees of freedom and thus develop nontrivial quantum effects in graphene. Here, we demonstrate the successful fabrication of graphene in proximity to atomically flat magnetic insulating LaMnO{sub 3} films. The insulating nature of the LaMnO{sub 3} films not only ensures the electronic transport only occur in the graphene layers but also allow them to serve as dielectric layers for gating. Transport measurements reveal anomalous behaviors, including asymmetrical longitudinal magnetoresistivity and nonlinear Hall effect. This work may pave a way toward the realization of intriguing quantum phases in graphene.

• OSTI ID: 22350820
• Journal Information: Applied Physics Letters, Vol. 105, Issue 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COUPLING
DEGREES OF FREEDOM
DIELECTRIC MATERIALS
FABRICATION
FILMS
GRAPHENE
HALL EFFECT
LANTHANUM COMPOUNDS
LAYERS
MAGNETORESISTANCE
MANGANATES
NONLINEAR PROBLEMS
SUBSTRATES