Minimized open-circuit voltage reduction in GaAs/InGaAs quantum well solar cells with bandgap-engineered graded quantum well depths

Journal Article · Mon Sep 22 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4896739· OSTI ID:22350773

Li, Xiaohan; Dasika, Vaishno D.; Li, Ping-Chun; Ji, Li; Bank, Seth R.; Yu, Edward T. ^[1]

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1. Microelectronics Research Center, University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States)

The use of InGaAs quantum wells with composition graded across the intrinsic region to increase open-circuit voltage in p-i-n GaAs/InGaAs quantum well solar cells is demonstrated and analyzed. By engineering the band-edge energy profile to reduce photo-generated carrier concentration in the quantum wells at high forward bias, simultaneous increases in both open-circuit voltage and short-circuit current density are achieved, compared to those for a structure with the same average In concentration, but constant rather than graded quantum well composition across the intrinsic region. This approach is combined with light trapping to further increase short-circuit current density.

• OSTI ID: 22350773
• Journal Information: Applied Physics Letters, Vol. 105, Issue 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABUNDANCE
CARRIERS
CURRENT DENSITY
ELECTRIC POTENTIAL
ELECTRICAL FAULTS
GALLIUM ARSENIDES
INDIUM ARSENIDES
P-N JUNCTIONS
QUANTUM WELLS
REDUCTION
SOLAR CELLS
TRAPPING
VISIBLE RADIATION