The dominant factors affecting the memory characteristics of (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} high-k charge-trapping devices

Journal Article · Mon Sep 22 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4896595· OSTI ID:22350768

Gong, Changjie; Lan, Xuexin ^[1]; Yin, Qiaonan; Ou, Xin; Liu, Jinqiu; Sun, Chong; Wang, Laiguo; Lu, Wei; Yin, Jiang; Xu, Bo; Xia, Yidong; Liu, Zhiguo; Li, Aidong ^[2]

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1. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China)
2. National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China)

The prototypical charge-trapping memory devices with the structure p-Si/Al{sub 2}O{sub 3}/(Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x}/Al{sub 2}O{sub 3}/Pt(x = 0.5, 0.3, and 0.1) were fabricated by using atomic layer deposition and RF magnetron sputtering techniques. A memory window of 7.39 V with a charge storage density of 1.97 × 10{sup 13 }cm{sup −2} at a gate voltage of ±11 V was obtained for the memory device with the composite charge trapping layer (Ta{sub 2}O{sub 5}){sub 0.5}(Al{sub 2}O{sub 3}){sub 0.5}. All memory devices show fast program/erase speed and excellent endurance and retention properties, although some differences in their memory performance exist, which was ascribed to the relative individual band alignments of the composite (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} with Si.

• OSTI ID: 22350768
• Journal Information: Applied Physics Letters, Vol. 105, Issue 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
COMPOSITE MATERIALS
DENSITY
ELECTRIC POTENTIAL
LAYERS
MAGNETRONS
MEMORY DEVICES
SILICON
TANTALUM OXIDES
TRAPPING