Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories

Wang, Wei; Han, Jinhua; Ying, Jun; Xiang, Lanyi; Xie, Wenfa

doi:10.1063/1.4896665

Title: Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories

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Abstract

Two types of floating-gate based organic thin-film transistor nonvolatile memories (FG-OTFT-NVMs) were demonstrated, with poly(methyl methacrylate co glycidyl methacrylate) (P(MMA-GMA)) and tetratetracontane (TTC) as the tunneling layer, respectively. Their device performances were measured and compared. In the memory with a P(MMA-GMA) tunneling layer, typical unipolar hole transport was obtained with a relatively small mobility of 0.16 cm{sup 2}/V s. The unidirectional shift of turn-on voltage (V{sub on}) due to only holes trapped/detrapped in/from the floating gate resulted in a small memory window of 12.5 V at programming/erasing voltages (V{sub P}/V{sub E}) of ±100 V and a nonzero reading voltage. Benefited from the well-ordered molecule orientation and the trap-free surface of TTC layer, a considerably high hole mobility of 1.7 cm{sup 2}/V s and a visible feature of electrons accumulated in channel and trapped in floating-gate were achieved in the memory with a TTC tunneling layer. High hole mobility resulted in a high on current and a large memory on/off ratio of 600 at the V{sub P}/V{sub E} of ±100 V. Both holes and electrons were injected into floating-gate and overwritten each other, which resulted in a bidirectional V{sub on} shift. As a result, an enlarged memory window of 28.6 V at the V{sub P}/V{sub E} of ±100 Vmore »« less

Authors:

Wang, Wei; Han, Jinhua; Ying, Jun; Xiang, Lanyi; Xie, Wenfa ^[1]

State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

Publication Date:: Mon Sep 22 00:00:00 EDT 2014

OSTI Identifier:: 22350766

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 105; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; CARRIERS; CURRENTS; ELECTRIC POTENTIAL; ELECTRONS; HOLE MOBILITY; LAYERS; MEMORY DEVICES; MOLECULES; ORIENTATION; SURFACES; THIN FILMS; TRANSISTORS; TRAPPING; TRAPS; TUNNEL EFFECT

Citation Formats


                    Wang, Wei, Han, Jinhua, Ying, Jun, Xiang, Lanyi, and Xie, Wenfa. Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4896665.

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                    Wang, Wei, Han, Jinhua, Ying, Jun, Xiang, Lanyi, & Xie, Wenfa. Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories.  United States.  https://doi.org/10.1063/1.4896665

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                    Wang, Wei, Han, Jinhua, Ying, Jun, Xiang, Lanyi, and Xie, Wenfa. 2014.  
        "Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories".  United States.  https://doi.org/10.1063/1.4896665.

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@article{osti_22350766,

  title        = {Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories},

  author       = {Wang, Wei and Han, Jinhua and Ying, Jun and Xiang, Lanyi and Xie, Wenfa},

  abstractNote = {Two types of floating-gate based organic thin-film transistor nonvolatile memories (FG-OTFT-NVMs) were demonstrated, with poly(methyl methacrylate co glycidyl methacrylate) (P(MMA-GMA)) and tetratetracontane (TTC) as the tunneling layer, respectively. Their device performances were measured and compared. In the memory with a P(MMA-GMA) tunneling layer, typical unipolar hole transport was obtained with a relatively small mobility of 0.16 cm{sup 2}/V s. The unidirectional shift of turn-on voltage (V{sub on}) due to only holes trapped/detrapped in/from the floating gate resulted in a small memory window of 12.5 V at programming/erasing voltages (V{sub P}/V{sub E}) of ±100 V and a nonzero reading voltage. Benefited from the well-ordered molecule orientation and the trap-free surface of TTC layer, a considerably high hole mobility of 1.7 cm{sup 2}/V s and a visible feature of electrons accumulated in channel and trapped in floating-gate were achieved in the memory with a TTC tunneling layer. High hole mobility resulted in a high on current and a large memory on/off ratio of 600 at the V{sub P}/V{sub E} of ±100 V. Both holes and electrons were injected into floating-gate and overwritten each other, which resulted in a bidirectional V{sub on} shift. As a result, an enlarged memory window of 28.6 V at the V{sub P}/V{sub E} of ±100 V and a zero reading voltage were achieved. Based on our results, a strategy is proposed to optimize FG-OTFT-NVMs by choosing a right tunneling layer to improve the majority carrier mobility and realize ambipolar carriers injecting and trapping in the floating-gate.},

  doi          = {10.1063/1.4896665},

  url          = {https://www.osti.gov/biblio/22350766},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 12,

  volume       = 105,

  place        = {United States},

  year         = {Mon Sep 22 00:00:00 EDT 2014},

  month        = {Mon Sep 22 00:00:00 EDT 2014}

}

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