Spin susceptibility of two-dimensional electron system in HgTe surface quantum well

Journal Article · Mon Aug 11 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4891646· OSTI ID:22318094

Xu, Yonggang; Lv, Meng; Lin, Tie; Chang, Zhigang; Yu, Guolin; Dai, Ning; Chu, Junhao ^[1]; Wang, Reng ^[2]; Zhou, Yuanming ^[3]

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1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 20083 (China)
2. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)
3. School of Electrical and Electronic Engineering, Hubei University of Technology, Wuhan 430068 (China)

HgTe films were grown by vapor phase epitaxy on CdZnTe substrate and passivated by anodic oxidation to form surface quantum wells, in which the two-dimensional electron systems were studied by magnetotransport experiments. In tilted magnetic fields, coincidence method was used to extract the electron spin susceptibility |m{sub r}{sup *}g{sup *}|, which is found to be very large and show no significant dependence on the filling factor ν. These results deviate from former experiments and are related to the specific band structure of our samples.

• OSTI ID: 22318094
• Journal Information: Applied Physics Letters, Vol. 105, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CADMIUM TELLURIDES
ELECTRONS
MERCURY TELLURIDES
OXIDATION
QUANTUM WELLS
SPIN
SURFACES
VAPOR PHASE EPITAXY
ZINC TELLURIDES