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Title: Resistance switching in epitaxial SrCoO{sub x} thin films

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4893323· OSTI ID:22318026
; ; ; ; ;  [1]; ;  [2]; ;  [3];  [4];  [5]; ;  [6]; ; ; ;  [7]
  1. Division of Quantum Phases and Devices, Department of Physics, Konkuk University, Seoul 143-791 (Korea, Republic of)
  2. Department of Physics and Division of Energy System Research, Ajou University, Suwon 443-749 (Korea, Republic of)
  3. Department of Physics and Astronomy and Center for Subwavelength Optics, Seoul National University, Seoul 151-747 (Korea, Republic of)
  4. Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
  5. Department of Physics, Ewha Womans University, Seoul 120-750 (Korea, Republic of)
  6. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)
  7. Department of Material Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of)

We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO{sub 3} (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO{sub 2.5}) and conducting perovskite (SrCoO{sub 3−δ}) depending on the oxygen content. The current–voltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoO{sub x} thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO{sub 2.5}.

OSTI ID:
22318026
Journal Information:
Applied Physics Letters, Vol. 105, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English