Impact ionization in N-polar AlGaN/GaN high electron mobility transistors
- Department of Electrical and Computer Engineering, University of Santa Barbara California, Santa Barbara, California 93106 (United States)
The existence of impact ionization as one of the open questions for GaN device reliability was studied in N-polar AlGaN/GaN high electron mobility transistors. Electroluminescence (EL) imaging and spectroscopy from underneath the device gate contact revealed the presence of hot electrons in excess of the GaN bandgap energy even at moderate on-state bias conditions, enabling impact ionization with hole currents up to several hundreds of pA/mm. The detection of high energy luminescence from hot electrons demonstrates that EL analysis is a highly sensitive tool to study degradation mechanisms in GaN devices.
- OSTI ID:
- 22318025
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges
Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation
Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors
Journal Article
·
Mon Nov 04 00:00:00 EST 2013
· Applied Physics Letters
·
OSTI ID:22318025
+13 more
Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation
Journal Article
·
Mon May 25 00:00:00 EDT 2015
· Applied Physics Letters
·
OSTI ID:22318025
+6 more
Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors
Journal Article
·
Mon Jun 02 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22318025