Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high-k HfO{sub 2} electron blocking layer
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072 (China)
- Department of Physics, Institute of Nanoscience and Nanotechnology, Central China Normal University, Wuhan 430079 (China)
- College of Physical Science and Technology, Guangxi University, Nanning, Guangxi 530004 (China)
We demonstrated the capability of realizing enhanced ZnO-related UV emissions by using the low-cost and solution-processable ZnO quantum dots (QDs) with the help of a high-k HfO{sub 2} electron blocking layer (EBL) for the ZnO QDs/p-GaN light-emitting diodes (LEDs). Full-width at half maximum of the LED devices was greatly decreased from ∼110 to ∼54 nm, and recombinations related to nonradiative centers were significantly suppressed with inserting HfO{sub 2} EBL. The electroluminescence of the ZnO QDs/HfO{sub 2}/p-GaN LEDs demonstrated an interesting spectral narrowing effect with increasing HfO{sub 2} thickness. The Gaussian fitting revealed that the great enhancement of the Zn{sub i}-related emission at ∼414 nm whereas the deep suppression of the interfacial recombination at ∼477 nm should be the main reason for the spectral narrowing effect.
- OSTI ID:
- 22318024
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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