Resistive switching and conductance quantization in Ag/SiO{sub 2}/indium tin oxide resistive memories

Journal Article · Mon Aug 11 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4893277· OSTI ID:22318023

Gao, S.; Chen, C.; Liu, H. Y.; Lin, Y. S.; Li, S. Z.; Lu, S. H.; Wang, G. Y.; Song, C.; Zhai, Z. ^[1]

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1. Department of Metallurgical Engineering, College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024 (China)

The Ag/SiO{sub 2}/indium tin oxide (ITO) devices exhibit bipolar resistive switching with a large memory window of ∼10{sup 2}, satisfactory endurance of >500 cycles, good retention property of >2000 s, and fast operation speed of <100 ns, thus being a type of promising resistive memory. Under slow voltage sweep measurements, conductance plateaus with a conductance value of integer or half-integer multiples of single atomic point contact have been observed, which agree well with the physical phenomenon of conductance quantization. More importantly, the Ag/SiO{sub 2}/ITO devices exhibit more distinct quantized conductance plateaus under pulse measurements, thereby showing the potential for realizing ultra-high storage density.

• OSTI ID: 22318023
• Journal Information: Applied Physics Letters, Vol. 105, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRICAL PROPERTIES
ELECTROMAGNETIC PULSES
INDIUM COMPOUNDS
QUANTIZATION
SILICON OXIDES
SILVER
TIN OXIDES