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Title: Voltage controlled modification of flux closure domains in planar magnetic structures for microwave applications

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4892942· OSTI ID:22318004
; ; ; ; ;  [1]; ;  [2]
  1. School of Physics and Astronomy, The University of Nottingham, Nottingham NG7 2RD (United Kingdom)
  2. London Centre of Nanotechnology, University College London, London WC1H 0AH (United Kingdom)

Voltage controlled modification of the magnetocrystalline anisotropy in a hybrid piezoelectric/ferromagnet device has been studied using Photoemission Electron Microscopy with X-ray magnetic circular dichroism as the contrast mechanism. The experimental results demonstrate that the large magnetostriction of the epitaxial Fe{sub 81}Ga{sub 19} layer enables significant modification of the domain pattern in laterally confined disc structures. In addition, micromagnetic simulations demonstrate that the strain induced modification of the magnetic anisotropy allows for voltage tuneability of the natural resonance of both the confined spin wave modes and the vortex motion. These results demonstrate the possibility for using voltage induced strain in low-power voltage tuneable magnetic microwave oscillators.

OSTI ID:
22318004
Journal Information:
Applied Physics Letters, Vol. 105, Issue 6; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English