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Title: Anomalous lasing of high-speed 850 nm InGaAlAs oxide-confined vertical-cavity surface-emitting lasers with a large negative gain-to-cavity wavelength detuning

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4892885· OSTI ID:22317978
; ; ;  [1];  [2];  [3]; ;  [4];  [4]
  1. A. F. Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 26 Polytekhnicheskaya Street, Saint Petersburg 194021 (Russian Federation)
  2. Submicron Heterostructures for Microelectronics, Research and Engineering Center of the Russian Academy of Sciences, 26 Polytekhnicheskaya Street, Saint Petersburg 194021 (Russian Federation)
  3. Saint Petersburg State Polytechnical University, 29 Polytekhnicheskaya Street, Saint Petersburg 195251 (Russian Federation)
  4. Zentrum für Nanophotonik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin 10623, Federal Republic of Germany (Germany)

The impact of a large negative quantum well gain-to-cavity etalon wavelength detuning on the static and dynamic characteristics of 850 nm InGaAlAs high-speed oxide-confined vertical-cavity surface-emitting lasers (VCSELs) was investigated. Three distinct lasing regimes were revealed in large square aperture (≥7 μm per side) devices with large detuning including: (1) an anomalous lasing via higher order Hermite–Gaussian modes at low forward bias current; (2) lasing via the lowest order Hermite–Gaussian modes at high bias current; and (3) simultaneous lasing via both types of transverse modes at intermediate bias currents. In contrast to conventional multimode VCSELs a two-resonance modulation response was observed for the case of co-lasing via multiple transverse modes with high spectral separation. The reduction in the oxide aperture area resulted in classical lasing via the lowest order modes with a conventional single-resonance frequency response.

OSTI ID:
22317978
Journal Information:
Applied Physics Letters, Vol. 105, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English