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Title: Nonlinear space charge dynamics in mixed ionic-electronic conductors: Resistive switching and ferroelectric-like hysteresis of electromechanical response

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4891346· OSTI ID:22314638
;  [1];  [2];  [3];  [4]; ; ;  [5]
  1. Institute of Physics NAS of Ukraine, 46, pr. Nauki, Kyiv 03028 (Ukraine)
  2. Institute of Problems for Material Sciences, NAS of Ukraine, 3, Krjijanovskogo str., Kyiv 03028 Ukraine (Ukraine)
  3. Taras Shevchenko Kyiv National University, Radiophysical Faculty 4, pr. Akademika Hlushkova, 03022 Kyiv (Ukraine)
  4. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
  5. The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

We performed self-consistent modelling of nonlinear electrotransport and electromechanical response of thin films of mixed ionic-electronic conductors (MIEC) allowing for steric effects of mobile charged defects (ions, protons, or vacancies), electron degeneration, and Vegard stresses. We establish correlations between the features of the nonlinear space-charge dynamics, current-voltage, and bending-voltage curves for different types of the film electrodes. A pronounced ferroelectric-like hysteresis of the bending-voltage loops and current maxima on the double hysteresis current-voltage loops appear for the electron-transport electrodes. The double hysteresis loop with pronounced humps indicates a memristor-type resistive switching. The switching occurs due to the strong nonlinear coupling between the electronic and ionic subsystems. A sharp meta-stable maximum of the electron density appears near one open electrode and moves to another one during the periodic change of applied voltage. Our results can explain the nonlinear nature and correlation of electrical and mechanical memory effects in thin MIEC films. The analytical expression proving that the electrically induced bending of MIEC films can be detected by interferometric methods is derived.

OSTI ID:
22314638
Journal Information:
Journal of Applied Physics, Vol. 116, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English