Transparent conductor-Si pillars heterojunction photodetector

Yun, Ju-Hyung; Kim, Joondong; Park, Yun Chang

doi:10.1063/1.4892489

Title: Transparent conductor-Si pillars heterojunction photodetector

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Abstract

We report a high-performing heterojunction photodetector by enhanced surface effects. Periodically, patterned Si substrates were used to enlarge the photo-reactive regions and yield proportionally improved photo-responses. An optically transparent indium-tin-oxide (ITO) was deposited on a Si substrate and spontaneously formed an ITO/Si heterojunction. Due to an electrical conductive ITO film, ITO/Si heterojunction device can be operated at zero-bias, which effectively suppresses the dark current, resulting in better performances than those by a positive or a negative bias operation. This zero-bias operating heterojunction device exhibits a short response time (∼ 22.5 ms) due to the physical reaction to the incident light. We revealed that the location of the space charge region (SCR) is crucial for a specific photon-wavelength response. The SCR space has the highest collection efficiency of the photo-generated carriers. The photo-response can be maximized when we design the photodetector by superposing the SCR space over a corresponding photon-absorption length. The surface enhanced Si pillar devices significantly improved the photo-responses ratios from that of a planar Si device. According to this design scheme, a high photo-response ratio of 5560% was achieved at a wavelength of 600 nm. This surfaced-enhanced heterojunction design scheme would be a promising approach for various photoelectric applications.

Authors:

Yun, Ju-Hyung ^[1]; Kim, Joondong ^[1]; Park, Yun Chang ^[2]

Department of Electrical Engineering, Incheon National University, Incheon 406772 (Korea, Republic of)
Measurement and Analysis Division, National Nanofab Center (NNFC), Daejeon 305-806 (Korea, Republic of)

Publication Date:: Thu Aug 14 00:00:00 EDT 2014

OSTI Identifier:: 22314631

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 116; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; DESIGN; EQUIPMENT; HETEROJUNCTIONS; LENGTH; PERIODICITY; PHOTONS; SPACE CHARGE; SUBSTRATES; SURFACES; TIN OXIDES; VISIBLE RADIATION; WAVELENGTHS

Citation Formats


                    Yun, Ju-Hyung, Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, New York 14260, Kim, Joondong, and Park, Yun Chang. Transparent conductor-Si pillars heterojunction photodetector.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4892489.

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                    Yun, Ju-Hyung, Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, New York 14260, Kim, Joondong, & Park, Yun Chang. Transparent conductor-Si pillars heterojunction photodetector.  United States.  https://doi.org/10.1063/1.4892489

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                    Yun, Ju-Hyung, Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, New York 14260, Kim, Joondong, and Park, Yun Chang. 2014.  
        "Transparent conductor-Si pillars heterojunction photodetector".  United States.  https://doi.org/10.1063/1.4892489.

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@article{osti_22314631,

  title        = {Transparent conductor-Si pillars heterojunction photodetector},

  author       = {Yun, Ju-Hyung and Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, New York 14260 and Kim, Joondong and Park, Yun Chang},

  abstractNote = {We report a high-performing heterojunction photodetector by enhanced surface effects. Periodically, patterned Si substrates were used to enlarge the photo-reactive regions and yield proportionally improved photo-responses. An optically transparent indium-tin-oxide (ITO) was deposited on a Si substrate and spontaneously formed an ITO/Si heterojunction. Due to an electrical conductive ITO film, ITO/Si heterojunction device can be operated at zero-bias, which effectively suppresses the dark current, resulting in better performances than those by a positive or a negative bias operation. This zero-bias operating heterojunction device exhibits a short response time (∼ 22.5 ms) due to the physical reaction to the incident light. We revealed that the location of the space charge region (SCR) is crucial for a specific photon-wavelength response. The SCR space has the highest collection efficiency of the photo-generated carriers. The photo-response can be maximized when we design the photodetector by superposing the SCR space over a corresponding photon-absorption length. The surface enhanced Si pillar devices significantly improved the photo-responses ratios from that of a planar Si device. According to this design scheme, a high photo-response ratio of 5560% was achieved at a wavelength of 600 nm. This surfaced-enhanced heterojunction design scheme would be a promising approach for various photoelectric applications.},

  doi          = {10.1063/1.4892489},

  url          = {https://www.osti.gov/biblio/22314631},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 6,

  volume       = 116,

  place        = {United States},

  year         = {Thu Aug 14 00:00:00 EDT 2014},

  month        = {Thu Aug 14 00:00:00 EDT 2014}

}

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