Alignment of the diamond nitrogen vacancy center by strain engineering

Journal Article · Mon Aug 04 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4892544· OSTI ID:22314506

Karin, Todd ^[1]; Dunham, Scott ^[2]; Fu, Kai-Mei ^[1]

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1. Department of Physics, University of Washington, Seattle, Washington 98195 (United States)
2. Department of Electrical Engineering, University of Washington, Seattle, Washington 98195 (United States)

The nitrogen vacancy (NV) center in diamond is a sensitive probe of magnetic field and a promising qubit candidate for quantum information processing. The performance of many NV-based devices improves by aligning the NV(s) parallel to a single crystallographic direction. Using ab initio theoretical techniques, we show that NV orientation can be controlled by high-temperature annealing in the presence of strain under currently accessible experimental conditions. We find that (89 ± 7)% of NVs align along the [111] crystallographic direction under 2% compressive biaxial strain (perpendicular to [111]) and an annealing temperature of 970 °C.

• OSTI ID: 22314506
• Journal Information: Applied Physics Letters, Vol. 105, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRYSTAL STRUCTURE
DIAMONDS
ENGINEERING
GRAIN ORIENTATION
NITROGEN
QUANTUM INFORMATION
STRAINS
VACANCIES