Improved electrical mobility in highly epitaxial La:BaSnO{sub 3} films on SmScO{sub 3}(110) substrates

Journal Article · Mon Aug 04 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4891816· OSTI ID:22314488

Wadekar, P. V.; O'Sullivan, M.; Flack, N. L. O.; Manning, T. D.; Claridge, J. B.; Rosseinsky, M. J. ^[1]; Alaria, J.; Phillips, L. J.; Durose, K. ^[2]; Lozano, O.; Lucas, S. ^[3]

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1. Department of Chemistry, University of Liverpool, Crown Street, Liverpool L69 7ZD (United Kingdom)
2. Stephenson Institute for Renewable Energy and Department of Physics, University of Liverpool, Oxford Street, Liverpool L69 7ZE (United Kingdom)
3. Research Centre for the Physics of Matter and Radiation, Namur Research Institute for Life Sciences, University of Namur, Namur 500 (Belgium)

Heteroepitaxial growth of BaSnO{sub 3} and Ba{sub 1−x}La{sub x}SnO{sub 3} (x = 7%) lanthanum doped barium stannate thin films on different perovskite single crystal (SrTiO{sub 3} (001) and SmScO{sub 3} (110)) substrates has been achieved by pulsed laser deposition under optimized deposition conditions. X-ray diffraction measurements indicate that the films on either of these substrates are relaxed due to the large mismatch and present a high degree of crystallinity with narrow rocking curves and smooth surface morphology while analytical quantification by proton induced X-ray emission confirms the stoichiometric La transfer from a polyphasic target, producing films with measured La contents above the bulk solubility limit. The films show degenerate semiconducting behavior on both substrates, with the observed room temperature resistivities, Hall mobilities, and carrier concentrations of 4.4 mΩ cm, 10.11 cm{sup 2} V{sup −1} s{sup −1}, and 1.38 × 10{sup 20} cm{sup −3} on SmScO{sub 3} and 7.8 mΩ cm, 5.8 cm{sup 2} V{sup −1} s{sup −1}, and 1.36 × 10{sup 20} cm{sup −3} on SrTiO{sub 3} ruling out any extrinsic contribution from the substrate. The superior electrical properties observed on the SmScO{sub 3} substrate are attributed to reduction in dislocation density from the lower lattice mismatch.

• OSTI ID: 22314488
• Journal Information: Applied Physics Letters, Vol. 105, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BARIUM
BARIUM COMPOUNDS
DISLOCATIONS
ENERGY BEAM DEPOSITION
EPITAXY
LANTHANUM
LANTHANUM COMPOUNDS
LASER RADIATION
MONOCRYSTALS
SAMARIUM COMPOUNDS
SCANDIUM COMPOUNDS
STRONTIUM TITANATES
SUBSTRATES
THIN FILMS
TIN COMPOUNDS
X-RAY DIFFRACTION