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Title: InAs quantum dot growth on Al{sub x}Ga{sub 1−x}As by metalorganic vapor phase epitaxy for intermediate band solar cells

Abstract

InAs quantum dot multilayers have been grown using Al{sub x}Ga{sub 1−x}As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.

Authors:
;  [1]; ;  [1];  [1]; ; ;  [2]
  1. Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil)
  2. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)
Publication Date:
OSTI Identifier:
22314378
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 116; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; CRYSTAL DEFECTS; GALLIUM ARSENIDES; INDIUM ARSENIDES; QUANTUM DOTS; SOLAR CELLS; SPACERS; VAPOR PHASE EPITAXY; X-RAY SPECTROSCOPY

Citation Formats

Jakomin, R., E-mail: robertojakomin@xerem.ufrj.br, Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ, Kawabata, R. M. S., Souza, P. L., Pontificia Universidade Católica do Rio de Janeiro, Marques de São Vicente 225, Rio de Janeiro, 22452-900 RJ, Mourão, R. T., Pires, M. P., Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ, Micha, D. N., Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ, Coordenação de Licenciatura em Física, CEFET/RJ, Petrópolis-RJ, Xie, H., Fischer, A. M., and Ponce, F. A. InAs quantum dot growth on Al{sub x}Ga{sub 1−x}As by metalorganic vapor phase epitaxy for intermediate band solar cells. United States: N. p., 2014. Web. doi:10.1063/1.4894295.
Jakomin, R., E-mail: robertojakomin@xerem.ufrj.br, Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ, Kawabata, R. M. S., Souza, P. L., Pontificia Universidade Católica do Rio de Janeiro, Marques de São Vicente 225, Rio de Janeiro, 22452-900 RJ, Mourão, R. T., Pires, M. P., Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ, Micha, D. N., Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ, Coordenação de Licenciatura em Física, CEFET/RJ, Petrópolis-RJ, Xie, H., Fischer, A. M., & Ponce, F. A. InAs quantum dot growth on Al{sub x}Ga{sub 1−x}As by metalorganic vapor phase epitaxy for intermediate band solar cells. United States. https://doi.org/10.1063/1.4894295
Jakomin, R., E-mail: robertojakomin@xerem.ufrj.br, Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ, Kawabata, R. M. S., Souza, P. L., Pontificia Universidade Católica do Rio de Janeiro, Marques de São Vicente 225, Rio de Janeiro, 22452-900 RJ, Mourão, R. T., Pires, M. P., Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ, Micha, D. N., Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ, Coordenação de Licenciatura em Física, CEFET/RJ, Petrópolis-RJ, Xie, H., Fischer, A. M., and Ponce, F. A. 2014. "InAs quantum dot growth on Al{sub x}Ga{sub 1−x}As by metalorganic vapor phase epitaxy for intermediate band solar cells". United States. https://doi.org/10.1063/1.4894295.
@article{osti_22314378,
title = {InAs quantum dot growth on Al{sub x}Ga{sub 1−x}As by metalorganic vapor phase epitaxy for intermediate band solar cells},
author = {Jakomin, R., E-mail: robertojakomin@xerem.ufrj.br and Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ and Kawabata, R. M. S. and Souza, P. L. and Pontificia Universidade Católica do Rio de Janeiro, Marques de São Vicente 225, Rio de Janeiro, 22452-900 RJ and Mourão, R. T. and Pires, M. P. and Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ and Micha, D. N. and Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ and Coordenação de Licenciatura em Física, CEFET/RJ, Petrópolis-RJ and Xie, H. and Fischer, A. M. and Ponce, F. A.},
abstractNote = {InAs quantum dot multilayers have been grown using Al{sub x}Ga{sub 1−x}As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.},
doi = {10.1063/1.4894295},
url = {https://www.osti.gov/biblio/22314378}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 116,
place = {United States},
year = {Sun Sep 07 00:00:00 EDT 2014},
month = {Sun Sep 07 00:00:00 EDT 2014}
}