Large positive magnetoresistance effects in the dilute magnetic semiconductor (Zn,Mn)Se in the regime of electron hopping
- Department of Physics and Material Sciences Center, Philipps-University, D-35032 Marburg (Germany)
- Institute of Semiconductor Physics, 630090 Novosibirsk (Russian Federation)
- Institute of Experimental Physics I, Justus-Liebig-University Giessen, D-35392 Giessen (Germany)
- Institut für Angewandte Physik and Center for Functional Nanostructures (CFN), Universität Karlsruhe, D-76131 Karlsruhe (Germany)
Magnetoresistance in dilute magnetic semiconductors is studied in the hopping transport regime. Measurements performed on Cl-doped Zn{sub 1–x}Mn{sub x}Se with x < 8% are compared with simulation results obtained by a hopping transport model. The energy levels of the Cl donors are affected by the magnetization of Mn atoms in their vicinity via the s-d exchange interaction. Compositional disorder, in particular, the random distribution of magnetic atoms, leads to a magnetic-field induced broadening of the donor energy distribution. As the energy distribution broadens, the electron transport is hindered and a large positive contribution to the magnetoresistance arises. This broadening of the donor energy distribution is largely sufficient to account for the experimentally observed magnetoresistance effects in n-type (Zn,Mn)Se with donor concentrations below the metal–insulator transition.
- OSTI ID:
- 22314340
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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