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Title: X-ray diffraction study of short-period AlN/GaN superlattices

Abstract

The structure of short-period hexagonal GaN/AlN superlattices (SLs) has been investigated by X-ray diffraction. The samples have been grown by metalorganic vapor-phase epitaxy (MOVPE) in a horizontal reactor at a temperature of 1050°C on (0001)Al{sub 2}O{sub 3} substrates using GaN and AlN buffer layers. The SL period changes from 2 to 6 nm, and the thickness of the structure varies in a range from 0.3 to 1 μm. The complex of X-ray diffraction techniques includes a measurement of θ-2θ rocking curves of symmetric Bragg reflection, the construction of intensity maps for asymmetric reflections, a measurement and analysis of peak broadenings in different diffraction geometries, a precise measurement of lattice parameters, and the determination of radii of curvature. The thickness and strain of separate SL layers are determined by measuring the θ-2θ rocking curves subsequent simulation. It is shown that most SL samples are completely relaxed as a whole. At the same time, relaxation is absent between sublayers, which is why strains in the AlN and GaN sublayers (on the order of 1.2 × 10{sup −2}) have different signs. An analysis of diffraction peak half-widths allows us to determine the densities of individual sets of dislocations and observe their change frommore » buffer layers to SLs.« less

Authors:
; ; ; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22311426
Resource Type:
Journal Article
Journal Name:
Crystallography Reports
Additional Journal Information:
Journal Volume: 58; Journal Issue: 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Inc.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7745
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; ALUMINIUM OXIDES; BRAGG REFLECTION; CRYSTAL LATTICES; DISLOCATIONS; GALLIUM NITRIDES; LATTICE PARAMETERS; LAYERS; NEUTRON DIFFRACTION; VAPOR PHASE EPITAXY; X-RAY DIFFRACTION

Citation Formats

Kyutt, R. N., E-mail: r.kyutt@mail.ioffe.ru, Shcheglov, M. P., Ratnikov, V. V., Yagovkina, M. A., Davydov, V. Yu., Smirnov, A. N., Rozhavskaya, M. M., Zavarin, E. E., and Lundin, V. V. X-ray diffraction study of short-period AlN/GaN superlattices. United States: N. p., 2013. Web. doi:10.1134/S1063774513070109.
Kyutt, R. N., E-mail: r.kyutt@mail.ioffe.ru, Shcheglov, M. P., Ratnikov, V. V., Yagovkina, M. A., Davydov, V. Yu., Smirnov, A. N., Rozhavskaya, M. M., Zavarin, E. E., & Lundin, V. V. X-ray diffraction study of short-period AlN/GaN superlattices. United States. https://doi.org/10.1134/S1063774513070109
Kyutt, R. N., E-mail: r.kyutt@mail.ioffe.ru, Shcheglov, M. P., Ratnikov, V. V., Yagovkina, M. A., Davydov, V. Yu., Smirnov, A. N., Rozhavskaya, M. M., Zavarin, E. E., and Lundin, V. V. 2013. "X-ray diffraction study of short-period AlN/GaN superlattices". United States. https://doi.org/10.1134/S1063774513070109.
@article{osti_22311426,
title = {X-ray diffraction study of short-period AlN/GaN superlattices},
author = {Kyutt, R. N., E-mail: r.kyutt@mail.ioffe.ru and Shcheglov, M. P. and Ratnikov, V. V. and Yagovkina, M. A. and Davydov, V. Yu. and Smirnov, A. N. and Rozhavskaya, M. M. and Zavarin, E. E. and Lundin, V. V.},
abstractNote = {The structure of short-period hexagonal GaN/AlN superlattices (SLs) has been investigated by X-ray diffraction. The samples have been grown by metalorganic vapor-phase epitaxy (MOVPE) in a horizontal reactor at a temperature of 1050°C on (0001)Al{sub 2}O{sub 3} substrates using GaN and AlN buffer layers. The SL period changes from 2 to 6 nm, and the thickness of the structure varies in a range from 0.3 to 1 μm. The complex of X-ray diffraction techniques includes a measurement of θ-2θ rocking curves of symmetric Bragg reflection, the construction of intensity maps for asymmetric reflections, a measurement and analysis of peak broadenings in different diffraction geometries, a precise measurement of lattice parameters, and the determination of radii of curvature. The thickness and strain of separate SL layers are determined by measuring the θ-2θ rocking curves subsequent simulation. It is shown that most SL samples are completely relaxed as a whole. At the same time, relaxation is absent between sublayers, which is why strains in the AlN and GaN sublayers (on the order of 1.2 × 10{sup −2}) have different signs. An analysis of diffraction peak half-widths allows us to determine the densities of individual sets of dislocations and observe their change from buffer layers to SLs.},
doi = {10.1134/S1063774513070109},
url = {https://www.osti.gov/biblio/22311426}, journal = {Crystallography Reports},
issn = {1063-7745},
number = 7,
volume = 58,
place = {United States},
year = {Sun Dec 15 00:00:00 EST 2013},
month = {Sun Dec 15 00:00:00 EST 2013}
}