Modification of the crystal structure of gadolinium gallium garnet by helium ion irradiation

Journal Article · Sun Dec 15 00:00:00 EST 2013 · Crystallography Reports

DOI:https://doi.org/10.1134/S1063774513070122· OSTI ID:22311417

Ostafiychuk, B. K.; Yaremiy, S. I.; Fedoriv, V. D.; Tomyn, U. O.; Umantsiv, M. M. ^[1]; Fodchuk, I. M. ^[2]; Kladko, V. P. ^[3]

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1. Vasyl Stefanyk Precarpathian National University (Ukraine)
2. Fedkovych State University (Ukraine)
3. National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)

The structure of gadolinium gallium garnet (GGG) single crystals before and after implantation by He{sup +} ions has been investigated using high-resolution X-ray diffraction methods and the generalized dynamic theory of X-ray scattering. The main types of growth defects in GGG single crystals and radiation-induced defects in the ion-implanted layer have been determined. It is established that the concentration of dislocation loops in the GGG surface layer modified by ion implantation increases and their radius decreases with an increase in the implantation dose.

• OSTI ID: 22311417
• Journal Information: Crystallography Reports, Vol. 58, Issue 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Inc.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7745
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL DEFECTS
CRYSTAL GROWTH
GADOLINIUM
GADOLINIUM COMPOUNDS
GALLIUM
HELIUM IONS
LAYERS
MONOCRYSTALS
X-RAY DIFFRACTION