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Title: Generation of spin-polarized currents via cross-relaxation with dynamically pumped paramagnetic impurities

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4890096· OSTI ID:22311355
 [1];  [2]
  1. Department of Physics, CUNY-City College of New York, New York, New York 10031 (United States)
  2. Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

Key to future spintronics and spin-based information processing technologies is the generation, manipulation, and detection of spin polarization in a solid state platform. Here, we theoretically explore an alternative route to spin injection via the use of dynamically polarized nitrogen-vacancy (NV) centers in diamond. We focus on the geometry where carriers and NV centers are confined to proximate, parallel layers and use a “trap-and-release” model to calculate the spin cross-relaxation probabilities between the charge carriers and neighboring NV centers. We identify near-unity regimes of carrier polarization depending on the NV spin state, applied magnetic field, and carrier g-factor. In particular, we find that unlike holes, electron spins are distinctively robust against spin-lattice relaxation by other, unpolarized paramagnetic centers. Further, the polarization process is only weakly dependent on the carrier hopping dynamics, which makes this approach potentially applicable over a broad range of temperatures.

OSTI ID:
22311355
Journal Information:
Applied Physics Letters, Vol. 105, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English