Generation of spin-polarized currents via cross-relaxation with dynamically pumped paramagnetic impurities
- Department of Physics, CUNY-City College of New York, New York, New York 10031 (United States)
- Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)
Key to future spintronics and spin-based information processing technologies is the generation, manipulation, and detection of spin polarization in a solid state platform. Here, we theoretically explore an alternative route to spin injection via the use of dynamically polarized nitrogen-vacancy (NV) centers in diamond. We focus on the geometry where carriers and NV centers are confined to proximate, parallel layers and use a “trap-and-release” model to calculate the spin cross-relaxation probabilities between the charge carriers and neighboring NV centers. We identify near-unity regimes of carrier polarization depending on the NV spin state, applied magnetic field, and carrier g-factor. In particular, we find that unlike holes, electron spins are distinctively robust against spin-lattice relaxation by other, unpolarized paramagnetic centers. Further, the polarization process is only weakly dependent on the carrier hopping dynamics, which makes this approach potentially applicable over a broad range of temperatures.
- OSTI ID:
- 22311355
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIERS
CHARGE CARRIERS
COMPUTERIZED SIMULATION
CURRENTS
DETECTION
DIAMONDS
IMPURITIES
INJECTION
LANDE FACTOR
LAYERS
MAGNETIC FIELDS
NITROGEN COMPLEXES
PARAMAGNETISM
POLARIZATION
PROBABILITY
SOLIDS
SPIN ORIENTATION
SPIN-LATTICE RELAXATION
TRAPS
VACANCIES