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Title: Low-temperature phase transitions in a soluble oligoacene and their effect on device performance and stability

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4894238· OSTI ID:22311351
; ; ; ; ;  [1];  [2]
  1. Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506 (United States)
  2. Department of Chemistry, Wake Forest University, Winston-Salem, North Carolina 27109 (United States)

The use of organic semiconductors in high-performance organic field-effect transistors requires a thorough understanding of the effects that processing conditions, thermal, and bias-stress history have on device operation. Here, we evaluate the temperature dependence of the electrical properties of transistors fabricated with 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene, a material that has attracted much attention recently due to its exceptional electrical properties. We have discovered a phase transition at T = 205 K and discuss its implications on device performance and stability. We examined the impact of this low-temperature phase transition on the thermodynamic, electrical, and structural properties of both single crystals and thin films of this material. Our results show that while the changes to the crystal structure are reversible, the induced thermal stress yields irreversible degradation of the devices.

OSTI ID:
22311351
Journal Information:
Applied Physics Letters, Vol. 105, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English