Light-induced hysteresis and recovery behaviors in photochemically activated solution-processed metal-oxide thin-film transistors
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
In this report, photo-induced hysteresis, threshold voltage (V{sub T}) shift, and recovery behaviors in photochemically activated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are investigated. It was observed that a white light illumination caused negative V{sub T} shift along with creation of clockwise hysteresis in electrical characteristics which can be attributed to photo-generated doubly ionized oxygen vacancies at the semiconductor/gate dielectric interface. More importantly, the photochemically activated IGZO TFTs showed much reduced overall V{sub T} shift compared to thermally annealed TFTs. Reduced number of donor-like interface states creation under light illumination and more facile neutralization of ionized oxygen vacancies by electron capture under positive gate potential are claimed to be the origin of the less V{sub T} shift in photochemically activated TFTs.
- OSTI ID:
- 22311225
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
COMPARATIVE EVALUATIONS
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
ELECTRON CAPTURE
GALLIUM OXIDES
ILLUMINANCE
INDIUM OXIDES
INTERFACES
MOS TRANSISTORS
PHOTOCHEMISTRY
SEMICONDUCTOR MATERIALS
THIN FILMS
VISIBLE RADIATION
ZINC OXIDES