On plasmon-induced photocurrent and doping of metal-patterned graphene

Journal Article · Mon Jul 28 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4891555· OSTI ID:22311216

Hosseini, T.

Patterning graphene with noble metal plasmonic nanostructures to enhance and to manipulate the optical and electronic properties of graphene promises a variety of technological innovations in the field of nano-optoelectronics. In this report, we briefly revisit photoconduction experiments done recently on graphene plasmonic sensors and show that the excess electrical current generated in response to spatially non-uniform optical excitation is primarily induced by a photo-thermo-electric effect in the graphene itself. As this mechanism has nothing to do with the excess free carrier generation common with conventional semiconductors, the plasmonic nanostructures cannot be utilized to regulate the free carrier density and doping of graphene, in contrast to what has been proposed recently.

• OSTI ID: 22311216
• Journal Information: Applied Physics Letters, Vol. 105, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CARRIER DENSITY
CARRIERS
ELECTRIC CURRENTS
EXCITATION
GRAPHENE
METALS
NANOELECTRONICS
NANOSTRUCTURES
SEMICONDUCTOR MATERIALS