Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene

Journal Article · Mon Jul 28 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4891558· OSTI ID:22311203

Zhang, Xi ^[1]; Wang, Chao; Diao, Dongfeng ^[1]; Sun, Chang Q ^[2]

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1. Institute of Nanosurface Science and Engineering, Shenzhen University, Shenzhen 518060 (China)
2. NOVITAS, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

In this paper, we clarified a robust mechanism of magnetism generated by excess electrons captured by edge-quantum well of diamagnetic armchair edges. Consistency between density functional theory calculations and electron cyclotron resonance experiments verified that: (1) Multi-layer armchair nanoribbons are stable with proper amounts of excess electrons which can provide net spin; (2) Since under-coordination induces lattice relaxation and potential well modulation, electrons tend to be trapped at edges; and (3) Neither large amount of excess electrons nor positive charges can induce magnetism. This work shed light on the development of graphene devices in its magnetic applications.

• OSTI ID: 22311203
• Journal Information: Applied Physics Letters, Vol. 105, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DENSITY FUNCTIONAL METHOD
ELECTRON CAPTURE
ELECTRON CYCLOTRON-RESONANCE
GRAPHENE
LAYERS
MAGNETISM
QUANTUM WELLS
RELAXATION
SPIN
TRAPPING
VISIBLE RADIATION