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Title: Linear temperature behavior of thermopower and strong electron-electron scattering in thick F-doped SnO{sub 2} films

Abstract

Both the semi-classical and quantum transport properties of F-doped SnO{sub 2} thick films (∼1 μm) were investigated experimentally. We found that the resistivity caused by the thermal phonons obeys Bloch-Grüneisen law from ∼90 to 300 K, while only the diffusive thermopower, which varies linearly with temperature from 300 down to 10 K, can be observed. The phonon-drag thermopower is completely suppressed due to the long electron-phonon relaxation time in the compound. These observations, together with the fact that the carrier concentration has negligible temperature dependence, indicate that the conduction electrons in F-doped SnO{sub 2} films possess free-electron-like characteristics. At low temperatures, the electron-electron scattering dominates over the electron-phonon scattering and governs the inelastic scattering process. The theoretical predications of scattering rates of large- and small-energy-transfer electron-electron scattering processes, which are negligibly weak in three-dimensional disordered conventional conductors, are quantitatively tested in this lower carrier concentration and free-electron-like highly degenerate semiconductor.

Authors:
;  [1]
  1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, Tianjin University, Tianjin 300072 (China)
Publication Date:
OSTI Identifier:
22311200
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRON-ELECTRON INTERACTIONS; ENERGY TRANSFER; FILMS; FLUORINE ADDITIONS; INELASTIC SCATTERING; RELAXATION TIME; SEMICONDUCTOR MATERIALS; STRONG INTERACTIONS; TEMPERATURE DEPENDENCE; THREE-DIMENSIONAL CALCULATIONS; TIN OXIDES

Citation Formats

Lang, Wen-Jing, and Li, Zhi-Qing. Linear temperature behavior of thermopower and strong electron-electron scattering in thick F-doped SnO{sub 2} films. United States: N. p., 2014. Web. doi:10.1063/1.4891855.
Lang, Wen-Jing, & Li, Zhi-Qing. Linear temperature behavior of thermopower and strong electron-electron scattering in thick F-doped SnO{sub 2} films. United States. https://doi.org/10.1063/1.4891855
Lang, Wen-Jing, and Li, Zhi-Qing. 2014. "Linear temperature behavior of thermopower and strong electron-electron scattering in thick F-doped SnO{sub 2} films". United States. https://doi.org/10.1063/1.4891855.
@article{osti_22311200,
title = {Linear temperature behavior of thermopower and strong electron-electron scattering in thick F-doped SnO{sub 2} films},
author = {Lang, Wen-Jing and Li, Zhi-Qing},
abstractNote = {Both the semi-classical and quantum transport properties of F-doped SnO{sub 2} thick films (∼1 μm) were investigated experimentally. We found that the resistivity caused by the thermal phonons obeys Bloch-Grüneisen law from ∼90 to 300 K, while only the diffusive thermopower, which varies linearly with temperature from 300 down to 10 K, can be observed. The phonon-drag thermopower is completely suppressed due to the long electron-phonon relaxation time in the compound. These observations, together with the fact that the carrier concentration has negligible temperature dependence, indicate that the conduction electrons in F-doped SnO{sub 2} films possess free-electron-like characteristics. At low temperatures, the electron-electron scattering dominates over the electron-phonon scattering and governs the inelastic scattering process. The theoretical predications of scattering rates of large- and small-energy-transfer electron-electron scattering processes, which are negligibly weak in three-dimensional disordered conventional conductors, are quantitatively tested in this lower carrier concentration and free-electron-like highly degenerate semiconductor.},
doi = {10.1063/1.4891855},
url = {https://www.osti.gov/biblio/22311200}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 4,
volume = 105,
place = {United States},
year = {Mon Jul 28 00:00:00 EDT 2014},
month = {Mon Jul 28 00:00:00 EDT 2014}
}