Local stress-induced effects on AlGaAs/AlOx oxidation front shape

Journal Article · Mon Jul 28 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4892094· OSTI ID:22311190

Chouchane, F.; Arnoult, A.; Lacoste, G.; Fontaine, C. ^[1]; Cherkashin, N. ^[2]

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1. CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse (France)
2. Univ de Toulouse, UPS, LAAS, F-31400 Toulouse (France)

The lateral oxidation of thick AlGaAs layers (>500 nm) is studied. An uncommon shape of the oxide tip is evidenced and attributed to the embedded stress distribution, inherent to the oxidation reaction. Experimental and numerical studies of the internal strain in oxidized Al{sub x}Ga{sub 1−x}As/GaAs structures were carried out by dark-field electron holography and finite element methods. A mapping of the strain distribution around the AlGaAs/oxide interface demonstrates the main role of internal stress on the shaping of the oxide front. These results demonstrate the high relevance of strain in oxide-confined III-V devices, in particular, with over-500-nm thick AlOx confinement layers.

• OSTI ID: 22311190
• Journal Information: Applied Physics Letters, Vol. 105, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
DISTRIBUTION
ELECTRONS
FINITE ELEMENT METHOD
GALLIUM ARSENIDES
HOLOGRAPHY
INTERFACES
LAYERS
NUMERICAL ANALYSIS
OXIDATION
RESIDUAL STRESSES
STRAINS
X-RAY SPECTROSCOPY