Semi-empirical device model for Cu{sub 2}ZnSn(S,Se){sub 4} solar cells
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
We present a device model for the hydrazine processed kesterite Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) solar cell with a world record efficiency of ∼12.6%. Detailed comparison of the simulation results, performed using wxAMPS software, to the measured device parameters shows that our model captures the vast majority of experimental observations, including V{sub OC}, J{sub SC}, FF, and efficiency under normal operating conditions, and temperature vs. V{sub OC}, sun intensity vs. V{sub OC}, and quantum efficiency. Moreover, our model is consistent with material properties derived from various techniques. Interestingly, this model does not have any interface defects/states, suggesting that all the experimentally observed features can be accounted for by the bulk properties of CZTSSe. An electrical (mobility) gap that is smaller than the optical gap is critical to fit the V{sub OC} data. These findings point to the importance of tail states in CZTSSe solar cells.
- OSTI ID:
- 22311173
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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