Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

Journal Article · Mon Jul 21 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4891426· OSTI ID:22311169

Lai, Hsin-Cheng ^[1]; Pei, Zingway ^[1]; Jian, Jyun-Ruri; Tzeng, Bo-Jie ^[2]

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1. Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China)
2. Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China)

In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology is suitable for use in flexible displays.

• OSTI ID: 22311169
• Journal Information: Applied Physics Letters, Vol. 105, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM OXIDES
CARRIER MOBILITY
DIELECTRIC MATERIALS
GALLIUM OXIDES
INDIUM OXIDES
NANOCOMPOSITES
NANOPARTICLES
POLYETHYLENES
STABILITY
STRAINS
SUBSTRATES
THIN FILMS
TRANSISTORS
ZINC OXIDES