Evaluation of thickness and strain of thin planar layers of InAs on GaAs(001) using spectroscopic ellipsometry

Journal Article · Mon Jul 21 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4890236· OSTI ID:22311134

Eyink, K. G.; Szmulowicz, F.; Esposito, D.; Grazulis, L.; Hill, M.; Mahalingam, K.; Aronow, A. J. ^[1]

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1. Nano Electronic Materials Branch (RXAN), Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433-7707 (United States)

We develop a technique for accurately measuring thickness of planar InAs films grown on (001) GaAs by spectroscopic ellipsometry, using bulk optical constants. We observe that the critical point structure for the E{sub 1} and E{sub 1} + Δ{sub 1} transitions extracted from the measured dielectric properties varies with strain in the layer. Transmission electron microscopy confirms the extracted thickness and measures the residual strain based on the dislocation spacing in the film. At small thickness, the E{sub 1} critical point is seen to markedly deviate from the dependence predicted by deformation potential theory and appears to be consistent with additional quantum confinement effects.

• OSTI ID: 22311134
• Journal Information: Applied Physics Letters, Vol. 105, Issue 3; Other Information: (c) 2014 U.S. Government; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEFORMATION
DIELECTRIC PROPERTIES
DISLOCATIONS
ELLIPSOMETRY
EVALUATION
FILMS
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
STRAINS
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY