Molecular beam epitaxial growth of a three-dimensional topological Dirac semimetal Na{sub 3}Bi

Journal Article · Mon Jul 21 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4890940· OSTI ID:22311128

Zhang, Yi ^[1]; Liu, Zhongkai; Shen, Zhi-Xun ^[2]; Zhou, Bo ^[1]; Kim, Yeongkwan; Hussain, Zahid; Mo, Sung-Kwan ^[1]; Chen, Yulin ^[3]

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1. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
2. Stanford Institute of Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States)
3. Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom)

We report a molecular beam epitaxial growth of Na{sub 3}Bi single-crystal thin films on two different substrates—epitaxial bilayer graphene terminated 6H-SiC(0001) and Si(111). Using reflection high-energy electron diffraction, we found that the lattice orientation of the grown Na{sub 3}Bi thin film was rotated by 30° respect to the surface lattice orientations of these two substrates. An in-situ angle-resolved photoemission spectroscopy clearly revealed the 3-dimensional Dirac-cone band structure in such thin films. Our approach of growing Na{sub 3}Bi thin film provides a potential route for further studying its intriguing electronic properties and for fabricating it into practical devices in future.

• OSTI ID: 22311128
• Journal Information: Applied Physics Letters, Vol. 105, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH ALLOYS
CRYSTAL GROWTH
ELECTRON DIFFRACTION
GRAPHENE
LAYERS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
ORIENTATION
PHOTOEMISSION
REFLECTION
SEMIMETALS
SILICON CARBIDES
SODIUM ALLOYS
SPECTROSCOPY
SUBSTRATES
SURFACES
THIN FILMS
THREE-DIMENSIONAL CALCULATIONS
TOPOLOGY