Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

Journal Article · Mon Jul 21 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4891636· OSTI ID:22311123

Lu, Q.; Zhuang, Q.; Hayton, J.; Yin, M.; Krier, A. ^[1]

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1. Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)

There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1 μm have been demonstrated and characterized. The gain was determined to be 2.9 cm{sup −1} per QD layer, and the waveguide loss was ∼15 cm{sup −1} at 4 K. Spontaneous emission measurements below threshold revealed a blue shift of the peak wavelength with increasing current, indicating filling of ground state heavy hole levels in the QDs. The characteristic temperature, T{sub 0} = 101 K below 50 K, but decreased to 48 K at higher temperatures. The emission wavelength of these lasers showed first a blue shift followed by a red shift with increasing temperature. A hybrid structure was used to fabricate the laser by combining a liquid phase epitaxy grown p-InAs{sub 0.61}Sb{sub 0.13}P{sub 0.26} lower cladding layer and an upper n{sup +} InAs plasmon cladding layer which resulted in a maximum operating temperature (T{sub max}) of 120 K in pulsed mode, which is the highest reported to date.

• OSTI ID: 22311123
• Journal Information: Applied Physics Letters, Vol. 105, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENTS
EMISSION
GAIN
GROUND STATES
HOLES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INTERMEDIATE INFRARED RADIATION
LASERS
LAYERS
LIGHT EMITTING DIODES
LIQUID PHASE EPITAXY
LOSSES
PHOSPHORUS COMPOUNDS
QUANTUM DOTS
RED SHIFT
SEMICONDUCTOR LASERS
TEMPERATURE RANGE 0065-0273 K
WAVEGUIDES
WAVELENGTHS