Analytical modeling of AlGaN/AlN/GaN heterostructures including effects of distributed surface donor states
- Carinthian Tech Research CTR AG, Europastraße 4/1, Technologiepark Villach, A-9524 Villach/St. Magdalen (Austria)
- Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway)
In this paper, a physics based analytical model is presented for calculation of the two-dimensional electron gas density and the bare surface barrier height of AlGaN/AlN/GaN material stacks. The presented model is based on the concept of distributed surface donor states and the self-consistent solution of Poisson equation at the different material interfaces. The model shows good agreement with the reported experimental data and can be used for the design and characterization of advanced GaN devices for power and radio frequency applications.
- OSTI ID:
- 22311107
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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