Thermally assisted magnetic switching of a single perpendicularly magnetized layer induced by an in-plane current
- Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)
- Collaborative Innovation Center for Magnetoelectric Industry CTGU, College of Science, China Three Gorges University, Yichang 443002 (China)
We report that by heating samples the critical current density for magnetization reversal (J{sub c}) in a single perpendicularly magnetized layer can be decreased from 2.6 × 10{sup 7 }A/cm{sup 2} to about 1 × 10{sup 6 }A/cm{sup 2} for a temperature increase of 143 K. The nonlinear dependence of J{sub c} on the perpendicular anisotropy field indicates that the coherent magnetic switching model cannot fully explain the current-induced perpendicular switching. By considering the current-induced domain nucleation and expansion during switching, we conclude that J{sub c} also depends on current-induced domain behavior. Moreover, by reversing the heat flow direction, we demonstrate that the thermal related spin transfer torques have little influence on the thermally assisted magnetic switching.
- OSTI ID:
- 22311086
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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