Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

Journal Article · Mon Jul 14 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4890472· OSTI ID:22311070

Gorai, Prashun

The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO{sub 2} (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

• OSTI ID: 22311070
• Journal Information: Applied Physics Letters, Vol. 105, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEFECTS
EFFICIENCY
ELECTRIC FIELDS
EQUIPMENT
INJECTION
OXYGEN
POINT DEFECTS
SEMICONDUCTOR MATERIALS
SIMULATION
SPATIAL DISTRIBUTION
SURFACES
TITANIUM OXIDES
VALLEYS