Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors
- School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)
- Department of Physics, Brown University, Providence, Rhode Island 02912 (United States)
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)
We describe an approach to reduce the contact resistance at compositional conducting/semiconducting indium-zinc-oxide (IZO) homojunctions used for contacts in thin film transistors (TFTs). By introducing silver nanoparticles (Ag NPs) at the homojunction interface between the conducting IZO electrodes and the amorphous IZO channel, we reduce the specific contact resistance, obtained by transmission line model measurements, down to ∼10{sup −2 }Ω cm{sup 2}, ∼3 orders of magnitude lower than either NP-free homojunction contacts or solid Ag metal contacts. The resulting back-gated TFTs with Ag NP contacts exhibit good field effect mobility of ∼27 cm{sup 2}/V s and an on/off ratio >10{sup 7}. We attribute the improved contact resistance to electric field concentration by the Ag NPs.
- OSTI ID:
- 22311041
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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