The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition

Journal Article · Mon Sep 01 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4895102· OSTI ID:22311017

Ahn, Byung Du ^[1]; Choi, Dong-won; Choi, Changhwan; Park, Jin-Seong ^[2]

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1. School of Electrical and Electronic Engineering, 50 Yonsei-ro, Seodaemun-gu, Yonsei University, Seoul 120-749 (Korea, Republic of)
2. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seoul 133-719 (Korea, Republic of)

We investigated the electrical properties of zinc tin oxide (ZTO) films deposited via atomic layer deposition and compared them to ZnO and SnO{sub 2} films as a function of the annealing temperature. The ZTO and ZnO, except for SnO{sub 2}, films exhibited an electrical transition from a metal to semiconductor characteristics when annealed above 300 °C. The X-ray photoelectron spectroscopy analyses indicate that the relative area of the oxygen vacancy-related peak decreased from 58% to 41% when annealing at temperatures above 400 °C. Thin film transistors incorporating ZTO active layers demonstrated a mobility of 13.2 cm{sup 2}/V s and a negative bias instability of −0.2 V.

• OSTI ID: 22311017
• Journal Information: Applied Physics Letters, Vol. 105, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CARRIER MOBILITY
DEPOSITS
ELECTRICAL PROPERTIES
INSTABILITY
METALS
OXYGEN
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TIN OXIDES
TRANSISTORS
VACANCIES
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES