Electrically driven single photon emission from a CdSe/ZnSSe single quantum dot at 200 K

Journal Article · Mon Sep 01 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4894729· OSTI ID:22311004

Quitsch, Wolf; Kümmell, Tilmar; Bacher, Gerd ^[1]; Gust, Arne; Kruse, Carsten; Hommel, Detlef ^[2]

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1. Werkstoffe der Elektrotechnik and CENIDE, Universität Duisburg-Essen, Bismarckstraße 81, 47057 Duisburg (Germany)
2. Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee 1, 28334 Bremen (Germany)

High temperature operation of an electrically driven single photon emitter based on a single epitaxial quantum dot is reported. CdSe/ZnSSe/MgS quantum dots are embedded into a p-i-n diode architecture providing almost background free excitonic and biexcitonic electroluminescence from individual quantum dots through apertures in the top contacts. Clear antibunching with g{sup 2}(τ = 0) = 0.28 ± 0.20 can be tracked up to T = 200 K, representing the highest temperature for electrically triggered single photon emission from a single quantum dot device.

• OSTI ID: 22311004
• Journal Information: Applied Physics Letters, Vol. 105, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
APERTURES
CADMIUM SELENIDES
ELECTROLUMINESCENCE
EPITAXY
EQUIPMENT
MAGNESIUM SULFIDES
PHOTONS
QUANTUM DOTS
SELENIUM COMPOUNDS
SULFUR COMPOUNDS
TEMPERATURE RANGE 0065-0273 K
ZINC COMPOUNDS