Gallium loading of gold seed for high yield of patterned GaAs nanowires

Journal Article · Mon Aug 25 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4894288· OSTI ID:22310976

Boulanger, J. P.; Chia, A. C. E.

A method is presented for maximizing the yield and crystal phase purity of vertically aligned Au-assisted GaAs nanowires grown with an SiO{sub x} selective area epitaxy mask on GaAs (111)B substrates. The nanowires were grown by the vapor-liquid-solid (VLS) method in a gas source molecular beam epitaxy system. During annealing, Au VLS seeds will alloy with the underlying GaAs substrate and collect beneath the SiO{sub x} mask layer. This behavior is detrimental to obtaining vertically aligned, epitaxial nanowire growth. To circumvent this issue, Au droplets were pre-filled with Ga assuring vertical yields in excess of 99%.

• OSTI ID: 22310976
• Journal Information: Applied Physics Letters, Vol. 105, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
ANNEALING
CRYSTAL GROWTH
CRYSTALS
DROPLETS
GALLIUM
GALLIUM ARSENIDES
GOLD
IMPURITIES
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM WIRES
RESPIRATORS
SILICON OXIDES
SOLIDS
SUBSTRATES