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Title: Scalable synthesis of layer-controlled WS{sub 2} and MoS{sub 2} sheets by sulfurization of thin metal films

Abstract

Transition metal dichalcogenides (TMDs) have emerged as exciting 2D materials beyond graphene due to their promising applications in the field of electronics and optoelectronics. Hence, the ability to produce controllable and uniformly thick TMD sheets over a large area is of utmost important for large-scale applications. Here, a facile method of synthesizing large-area, layer-controlled WS{sub 2}, and MoS{sub 2} sheets by sulfurization of their corresponding thin metal films is reported. A metal film, which is deposited by magnetron sputtering method, can be adjusted to produce, with great control, the desired sheet thickness down to a monolayer. Various characterization techniques, such as Raman, photoluminescence, and transmission electron microscopy, were used to evaluate the grown films. The results confirmed some of the exotic properties of TMDs such as the thickness dependent band-gap transition (indirect to direct band gap) and Raman shift. Devices made directly on the as-grown film showed modest mobility, ranging from 0.005 to 0.01 cm{sup 2} V{sup −1}s{sup −1}. Our synthesis method is simple and could also be used to synthesize other TMDs.

Authors:
; ; ;  [1]
  1. NTT Basic Research Laboratories, NTT Corporation Atsugi, Kanagawa 243-0198 (Japan)
Publication Date:
OSTI Identifier:
22310973
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHALCOGENIDES; FILMS; GRAPHENE; LAYERS; MAGNETRONS; MOBILITY; MOLYBDENUM SULFIDES; PHOTOLUMINESCENCE; RAMAN EFFECT; SPUTTERING; SYNTHESIS; THICKNESS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN SULFIDES

Citation Formats

Orofeo, Carlo M., Suzuki, Satoru, Sekine, Yoshiaki, and Hibino, Hiroki. Scalable synthesis of layer-controlled WS{sub 2} and MoS{sub 2} sheets by sulfurization of thin metal films. United States: N. p., 2014. Web. doi:10.1063/1.4893978.
Orofeo, Carlo M., Suzuki, Satoru, Sekine, Yoshiaki, & Hibino, Hiroki. Scalable synthesis of layer-controlled WS{sub 2} and MoS{sub 2} sheets by sulfurization of thin metal films. United States. https://doi.org/10.1063/1.4893978
Orofeo, Carlo M., Suzuki, Satoru, Sekine, Yoshiaki, and Hibino, Hiroki. 2014. "Scalable synthesis of layer-controlled WS{sub 2} and MoS{sub 2} sheets by sulfurization of thin metal films". United States. https://doi.org/10.1063/1.4893978.
@article{osti_22310973,
title = {Scalable synthesis of layer-controlled WS{sub 2} and MoS{sub 2} sheets by sulfurization of thin metal films},
author = {Orofeo, Carlo M. and Suzuki, Satoru and Sekine, Yoshiaki and Hibino, Hiroki},
abstractNote = {Transition metal dichalcogenides (TMDs) have emerged as exciting 2D materials beyond graphene due to their promising applications in the field of electronics and optoelectronics. Hence, the ability to produce controllable and uniformly thick TMD sheets over a large area is of utmost important for large-scale applications. Here, a facile method of synthesizing large-area, layer-controlled WS{sub 2}, and MoS{sub 2} sheets by sulfurization of their corresponding thin metal films is reported. A metal film, which is deposited by magnetron sputtering method, can be adjusted to produce, with great control, the desired sheet thickness down to a monolayer. Various characterization techniques, such as Raman, photoluminescence, and transmission electron microscopy, were used to evaluate the grown films. The results confirmed some of the exotic properties of TMDs such as the thickness dependent band-gap transition (indirect to direct band gap) and Raman shift. Devices made directly on the as-grown film showed modest mobility, ranging from 0.005 to 0.01 cm{sup 2} V{sup −1}s{sup −1}. Our synthesis method is simple and could also be used to synthesize other TMDs.},
doi = {10.1063/1.4893978},
url = {https://www.osti.gov/biblio/22310973}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 8,
volume = 105,
place = {United States},
year = {Mon Aug 25 00:00:00 EDT 2014},
month = {Mon Aug 25 00:00:00 EDT 2014}
}