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Title: Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

Abstract

This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si{sub 1−x}Ge{sub x} stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.

Authors:
; ; ; ;  [1];  [2]
  1. Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)
  2. Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22310967
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BEAMS; ELECTRON DIFFRACTION; EPITAXY; EQUIPMENT; FIELD EFFECT TRANSISTORS; FINITE ELEMENT METHOD; GERMANIUM COMPOUNDS; GERMANIUM SILICIDES; SILICON COMPOUNDS; STRAINS; THICKNESS

Citation Formats

Kim, Sun-Wook, Byeon, Dae-Seop, Jang, Hyunchul, Koo, Sang-Mo, Ko, Dae-Hong, and Lee, Hoo-Jeong. Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction. United States: N. p., 2014. Web. doi:10.1063/1.4893926.
Kim, Sun-Wook, Byeon, Dae-Seop, Jang, Hyunchul, Koo, Sang-Mo, Ko, Dae-Hong, & Lee, Hoo-Jeong. Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction. United States. https://doi.org/10.1063/1.4893926
Kim, Sun-Wook, Byeon, Dae-Seop, Jang, Hyunchul, Koo, Sang-Mo, Ko, Dae-Hong, and Lee, Hoo-Jeong. 2014. "Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction". United States. https://doi.org/10.1063/1.4893926.
@article{osti_22310967,
title = {Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction},
author = {Kim, Sun-Wook and Byeon, Dae-Seop and Jang, Hyunchul and Koo, Sang-Mo and Ko, Dae-Hong and Lee, Hoo-Jeong},
abstractNote = {This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si{sub 1−x}Ge{sub x} stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.},
doi = {10.1063/1.4893926},
url = {https://www.osti.gov/biblio/22310967}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 8,
volume = 105,
place = {United States},
year = {Mon Aug 25 00:00:00 EDT 2014},
month = {Mon Aug 25 00:00:00 EDT 2014}
}