Effects of a modular two-step ozone-water and annealing process on silicon carbide graphene
- Department of Chemistry—BMC, Uppsala University, Box 576, SE-751 23 Uppsala (Sweden)
- MAX IV Laboratory, Lund University, 22100 Lund (Sweden)
- DFM—Danish Fundamental Metrology, Matematiktorvet 307, DK-2800 Lyngby (Denmark)
- College of Engineering, Faraday Tower, Singleton Park, Swansea University, Swansea SA2 8PP (United Kingdom)
- VG Scienta Scientific AB, Box 15120, Vallongatan 1, SE-750 15 Uppsala (Sweden)
- Department of Physics, Chemistry, and Biology, Linköping University, SE-581 83 Linköping (Sweden)
By combining ozone and water, the effect of exposing epitaxial graphene on silicon carbide to an aggressive wet-chemical process has been evaluated after high temperature annealing in ultra high vacuum. The decomposition of ozone in water produces a number of oxidizing species, however, despite long exposure times to the aqueous-ozone environment, no graphene oxide was observed after the two-step process. The systems were comprehensively characterized before and after processing using Raman spectroscopy, core level photoemission spectroscopy, and angle resolved photoemission spectroscopy together with low energy electron diffraction, low energy electron microscopy, and atomic force microscopy. In spite of the chemical potential of the aqueous-ozone reaction environment, the graphene domains were largely unaffected raising the prospect of employing such simple chemical and annealing protocols to clean or prepare epitaxial graphene surfaces.
- OSTI ID:
- 22310940
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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