High-performance zero-bias ultraviolet photodetector based on p-GaN/n-ZnO heterojunction
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055 (China)
Lattice-match p-GaN and n-ZnO bilayers were heteroepitaxially grown on the c-sapphire substrate by metal organic chemical vapor deposition and molecular beam epitaxy technique, respectively. X-ray diffraction and photoluminescence investigations revealed the high crystal quality of the bilayer films. Subsequently, a p-GaN/n-ZnO heterojunction photodetector was fabricated. The p-n junction exhibited a clear rectifying I-V characteristic with a turn-on voltage of 3.7 V. At zero-bias voltage, the peak responsivity was 0.68 mA/W at 358 nm, which is one of the best performances reported for p-GaN/n-ZnO heterojunction detectors due to the excellent crystal quality of the bilayer films. These show that the high-performance p-GaN/n-ZnO heterojunction diode is potential for applications of portable UV detectors without driving power.
- OSTI ID:
- 22310885
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHEMICAL VAPOR DEPOSITION
CRYSTALS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
FILMS
GALLIUM NITRIDES
HETEROJUNCTIONS
LAYERS
MOLECULAR BEAM EPITAXY
ORGANOMETALLIC COMPOUNDS
PHOTODETECTORS
PHOTOLUMINESCENCE
P-N JUNCTIONS
SUBSTRATES
ULTRAVIOLET RADIATION
X-RAY DIFFRACTION
ZINC OXIDES