Epitaxial growth of large area single-crystalline few-layer MoS{sub 2} with high space charge mobility of 192 cm{sup 2} V{sup −1} s{sup −1}

Journal Article · Mon Aug 18 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4893143· OSTI ID:22310884

Ma, Lu; Yu, Mingzhe; Wu, Yiying ^[1]; Nath, Digbijoy N.; Lee, Edwin W.; Lee, Choong Hee; Arehart, Aaron; Rajan, Siddharth ^[2]

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1. Department of Chemistry and Biochemistry, The Ohio State University, 100 West 18th Avenue, Columbus, Ohio 43210 (United States)
2. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

We report on the vapor-solid growth of single crystalline few-layer MoS{sub 2} films on (0001)-oriented sapphire with excellent structural and electrical properties over centimeter length scale. High-resolution X-ray diffraction scans indicated that the films had good out-of-plane ordering and epitaxial registry. A carrier density of ∼2 × 10{sup 11 }cm{sup −2} and a room temperature mobility of 192 cm{sup 2}/Vs were extracted from space-charge limited transport regime in the films. The electron mobility was found to exhibit in-plane anisotropy with a ratio of ∼1.8. Theoretical estimates of the temperature-dependent electron mobility including optical phonon, acoustic deformation potential, and remote ionized impurity scattering were found to satisfactorily match the measured data. The synthesis approach reported here demonstrates the feasibility of device quality few-layer MoS{sub 2} films with excellent uniformity and high quality.

• OSTI ID: 22310884
• Journal Information: Applied Physics Letters, Vol. 105, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANISOTROPY
CARRIER DENSITY
CRYSTAL GROWTH
DEFORMATION
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
EPITAXY
FILMS
IMPURITIES
LAYERS
MOLYBDENUM SULFIDES
MONOCRYSTALS
RESOLUTION
SAPPHIRE
SOLIDS
SPACE CHARGE
SYNTHESIS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
X-RAY DIFFRACTION