Improvement of magnetic and structural stabilities in high-quality Co{sub 2}FeSi{sub 1−x}Al{sub x}/Si heterointerfaces

Journal Article · Mon Aug 18 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4893608· OSTI ID:22310866

Tanikawa, K.; Oki, S.; Kawano, M.; Miyao, M. ^[1]; Hamaya, K. ^[2]

---

1. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)
2. Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531 (Japan)

We study high-quality Co{sub 2}FeSi{sub 1−x}Al{sub x} Heusler compound/Si (0 ≤ x ≤ 1) heterointerfaces for silicon (Si)-based spintronic applications. In thermal treatment conditions, the magnetic and structural stabilities of the Co{sub 2}FeSi{sub 1−x}Al{sub x}/Si heterointerfaces are improved with increasing x in Co{sub 2}FeSi{sub 1−x}Al{sub x}. Compared with L2{sub 1}-ordered Co{sub 2}FeSi/Si, B2-ordered Co{sub 2}FeAl/Si can suppress the diffusion of Si atoms into the Heusler-compound structure. This experimental study will provide an important knowledge for applications in Si-based spin transistors with metallic source/drain contacts.

• OSTI ID: 22310866
• Journal Information: Applied Physics Letters, Vol. 105, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ATOMS
COBALT COMPOUNDS
DIFFUSION
HEAT TREATMENTS
HEUSLER ALLOYS
IRON COMPOUNDS
MAGNETIC PROPERTIES
SILICON
SILICON COMPOUNDS
SPIN
STABILITY
TRANSISTORS