Stacking fault induced tunnel barrier in platelet graphite nanofiber
- Institute of Physics, Academia Sinica, Taipei 115, Taiwan (China)
- Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Chia-Yi 62102, Taiwan (China)
A correlation study using image inspection and electrical characterization of platelet graphite nanofiber devices is conducted. Close transmission electron microscopy and diffraction pattern inspection reveal layers with inflection angles appearing in otherwise perfectly stacked graphene platelets, separating nanofibers into two domains. Electrical measurement gives a stability diagram consisting of alternating small-large Coulomb blockade diamonds, suggesting that there are two charging islands coupled together through a tunnel junction. Based on these two findings, we propose that a stacking fault can behave as a tunnel barrier for conducting electrons and is responsible for the observed double-island single electron transistor characteristics.
- OSTI ID:
- 22310854
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Removal of heavy metals and organic contaminants from aqueous streams by novel filtration methods. 1998 annual progress report
Edge-edge interactions in stacked graphene nanoplatelets