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Title: Degenerate resistive switching and ultrahigh density storage in resistive memory

Abstract

We show that in tantalum oxide resistive memories, activation power provides a multi-level variable for information storage that can be set and read separately from the resistance. These two state variables (resistance and activation power) can be precisely controlled in two steps: (1) the possible activation power states are selected by partially reducing resistance, then (2) a subsequent partial increase in resistance specifies the resistance state and the final activation power state. We show that these states can be precisely written and read electrically, making this approach potentially amenable for ultra-high density memories. We provide a theoretical explanation for information storage and retrieval from activation power and experimentally demonstrate information storage in a third dimension related to the change in activation power with resistance.

Authors:
;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Publication Date:
OSTI Identifier:
22310851
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DENSITY; ELECTRIC CONDUCTIVITY; MEMORY DEVICES; POTENTIALS; SIMULATION; SWITCHES; TANTALUM OXIDES

Citation Formats

Lohn, Andrew J., E-mail: drewlohn@gmail.com, Mickel, Patrick R., E-mail: prmicke@sandia.gov, James, Conrad D., and Marinella, Matthew J. Degenerate resistive switching and ultrahigh density storage in resistive memory. United States: N. p., 2014. Web. doi:10.1063/1.4895526.
Lohn, Andrew J., E-mail: drewlohn@gmail.com, Mickel, Patrick R., E-mail: prmicke@sandia.gov, James, Conrad D., & Marinella, Matthew J. Degenerate resistive switching and ultrahigh density storage in resistive memory. United States. https://doi.org/10.1063/1.4895526
Lohn, Andrew J., E-mail: drewlohn@gmail.com, Mickel, Patrick R., E-mail: prmicke@sandia.gov, James, Conrad D., and Marinella, Matthew J. 2014. "Degenerate resistive switching and ultrahigh density storage in resistive memory". United States. https://doi.org/10.1063/1.4895526.
@article{osti_22310851,
title = {Degenerate resistive switching and ultrahigh density storage in resistive memory},
author = {Lohn, Andrew J., E-mail: drewlohn@gmail.com and Mickel, Patrick R., E-mail: prmicke@sandia.gov and James, Conrad D. and Marinella, Matthew J.},
abstractNote = {We show that in tantalum oxide resistive memories, activation power provides a multi-level variable for information storage that can be set and read separately from the resistance. These two state variables (resistance and activation power) can be precisely controlled in two steps: (1) the possible activation power states are selected by partially reducing resistance, then (2) a subsequent partial increase in resistance specifies the resistance state and the final activation power state. We show that these states can be precisely written and read electrically, making this approach potentially amenable for ultra-high density memories. We provide a theoretical explanation for information storage and retrieval from activation power and experimentally demonstrate information storage in a third dimension related to the change in activation power with resistance.},
doi = {10.1063/1.4895526},
url = {https://www.osti.gov/biblio/22310851}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 10,
volume = 105,
place = {United States},
year = {Mon Sep 08 00:00:00 EDT 2014},
month = {Mon Sep 08 00:00:00 EDT 2014}
}