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Title: Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

Abstract

We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3 meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

Authors:
 [1]; ; ; ;  [1]
  1. NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
Publication Date:
OSTI Identifier:
22310845
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTAL GROWTH; DIFFUSION; EVOLUTION; GALLIUM ARSENIDES; INDIUM COMPOUNDS; NANOWIRES; PHOTOLUMINESCENCE; QUANTUM DOTS; STACKS; STRAINS

Citation Formats

Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp, Ota, Y., Ishida, S., Nishioka, M., Iwamoto, S., Arakawa, Y., and Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire. United States: N. p., 2014. Web. doi:10.1063/1.4895597.
Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp, Ota, Y., Ishida, S., Nishioka, M., Iwamoto, S., Arakawa, Y., & Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire. United States. https://doi.org/10.1063/1.4895597
Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp, Ota, Y., Ishida, S., Nishioka, M., Iwamoto, S., Arakawa, Y., and Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505. 2014. "Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire". United States. https://doi.org/10.1063/1.4895597.
@article{osti_22310845,
title = {Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire},
author = {Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp and Ota, Y. and Ishida, S. and Nishioka, M. and Iwamoto, S. and Arakawa, Y. and Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505},
abstractNote = {We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3 meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.},
doi = {10.1063/1.4895597},
url = {https://www.osti.gov/biblio/22310845}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 10,
volume = 105,
place = {United States},
year = {Mon Sep 08 00:00:00 EDT 2014},
month = {Mon Sep 08 00:00:00 EDT 2014}
}