Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

Journal Article · Mon Sep 08 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4895597· OSTI ID:22310845

Ota, Y. ^[1]; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. ^[1]

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1. NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3 meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

• OSTI ID: 22310845
• Journal Information: Applied Physics Letters, Vol. 105, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CRYSTAL GROWTH
DIFFUSION
EVOLUTION
GALLIUM ARSENIDES
INDIUM COMPOUNDS
NANOWIRES
PHOTOLUMINESCENCE
QUANTUM DOTS
STACKS
STRAINS