Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire
Abstract
We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3 meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.
- Authors:
-
- NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
- Publication Date:
- OSTI Identifier:
- 22310845
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 105; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTAL GROWTH; DIFFUSION; EVOLUTION; GALLIUM ARSENIDES; INDIUM COMPOUNDS; NANOWIRES; PHOTOLUMINESCENCE; QUANTUM DOTS; STACKS; STRAINS
Citation Formats
Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp, Ota, Y., Ishida, S., Nishioka, M., Iwamoto, S., Arakawa, Y., and Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire. United States: N. p., 2014.
Web. doi:10.1063/1.4895597.
Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp, Ota, Y., Ishida, S., Nishioka, M., Iwamoto, S., Arakawa, Y., & Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire. United States. https://doi.org/10.1063/1.4895597
Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp, Ota, Y., Ishida, S., Nishioka, M., Iwamoto, S., Arakawa, Y., and Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505. 2014.
"Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire". United States. https://doi.org/10.1063/1.4895597.
@article{osti_22310845,
title = {Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire},
author = {Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp and Ota, Y. and Ishida, S. and Nishioka, M. and Iwamoto, S. and Arakawa, Y. and Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505},
abstractNote = {We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3 meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.},
doi = {10.1063/1.4895597},
url = {https://www.osti.gov/biblio/22310845},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 10,
volume = 105,
place = {United States},
year = {Mon Sep 08 00:00:00 EDT 2014},
month = {Mon Sep 08 00:00:00 EDT 2014}
}