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Title: Large piezoresistive effect in surface conductive nanocrystalline diamond

Abstract

Surface conductivity in hydrogen-terminated single crystal diamond is an intriguing phenomenon for fundamental reasons as well as for application driven research. Surface conductivity is also observed in hydrogen-terminated nanocrystalline diamond although the electronic transport mechanisms remain unclear. In this work, the piezoresistive properties of intrinsic surface conductive nanocrystalline diamond are investigated. A gauge factor of 35 is calculated from bulging a diamond membrane of 350 nm thick, with a diameter of 656 μm and a sheet resistance of 1.45 MΩ/sq. The large piezoresistive effect is reasoned to originate directly from strain-induced changes in the resistivity of the grain boundaries. Additionally, we ascribe a small time-dependent fraction of the piezoresistive effect to charge trapping of charge carriers at grain boundaries. In conclusion, time-dependent piezoresistive effect measurements act as a tool for deeper understanding the complex electronic transport mechanisms induced by grain boundaries in a polycrystalline material or nanocomposite.

Authors:
 [1]
  1. Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium)
Publication Date:
OSTI Identifier:
22310819
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; HYDROGEN; MONOCRYSTALS; NANOSTRUCTURES; PIEZOELECTRICITY; POLYCRYSTALS; SURFACES; TIME DEPENDENCE; TRAPPING

Citation Formats

Janssens, S. D., E-mail: stoffel.d.janssens@gmail.com, Haenen, K., E-mail: ken.haenen@uhasselt.be, IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek, and Drijkoningen, S. Large piezoresistive effect in surface conductive nanocrystalline diamond. United States: N. p., 2014. Web. doi:10.1063/1.4895458.
Janssens, S. D., E-mail: stoffel.d.janssens@gmail.com, Haenen, K., E-mail: ken.haenen@uhasselt.be, IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek, & Drijkoningen, S. Large piezoresistive effect in surface conductive nanocrystalline diamond. United States. https://doi.org/10.1063/1.4895458
Janssens, S. D., E-mail: stoffel.d.janssens@gmail.com, Haenen, K., E-mail: ken.haenen@uhasselt.be, IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek, and Drijkoningen, S. 2014. "Large piezoresistive effect in surface conductive nanocrystalline diamond". United States. https://doi.org/10.1063/1.4895458.
@article{osti_22310819,
title = {Large piezoresistive effect in surface conductive nanocrystalline diamond},
author = {Janssens, S. D., E-mail: stoffel.d.janssens@gmail.com and Haenen, K., E-mail: ken.haenen@uhasselt.be and IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek and Drijkoningen, S.},
abstractNote = {Surface conductivity in hydrogen-terminated single crystal diamond is an intriguing phenomenon for fundamental reasons as well as for application driven research. Surface conductivity is also observed in hydrogen-terminated nanocrystalline diamond although the electronic transport mechanisms remain unclear. In this work, the piezoresistive properties of intrinsic surface conductive nanocrystalline diamond are investigated. A gauge factor of 35 is calculated from bulging a diamond membrane of 350 nm thick, with a diameter of 656 μm and a sheet resistance of 1.45 MΩ/sq. The large piezoresistive effect is reasoned to originate directly from strain-induced changes in the resistivity of the grain boundaries. Additionally, we ascribe a small time-dependent fraction of the piezoresistive effect to charge trapping of charge carriers at grain boundaries. In conclusion, time-dependent piezoresistive effect measurements act as a tool for deeper understanding the complex electronic transport mechanisms induced by grain boundaries in a polycrystalline material or nanocomposite.},
doi = {10.1063/1.4895458},
url = {https://www.osti.gov/biblio/22310819}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 10,
volume = 105,
place = {United States},
year = {Mon Sep 08 00:00:00 EDT 2014},
month = {Mon Sep 08 00:00:00 EDT 2014}
}