III-nitride quantum cascade detector grown by metal organic chemical vapor deposition

Song, Yu; Huang, Tzu-Yung; Badami, Pranav; Gmachl, Claire; Bhat, Rajaram; Zah, Chung-En

doi:10.1063/1.4901220

Title: III-nitride quantum cascade detector grown by metal organic chemical vapor deposition

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Abstract

Quantum cascade (QC) detectors in the GaN/Al{sub x}Ga{sub 1−x}N material system grown by metal organic chemical vapor deposition are designed, fabricated, and characterized. Only two material compositions, i.e., GaN as wells and Al{sub 0.5}Ga{sub 0.5}N as barriers are used in the active layers. The QC detectors operates around 4 μm, with a peak responsivity of up to ∼100 μA/W and a detectivity of up to 10{sup 8} Jones at the background limited infrared performance temperature around 140 K.

Authors:

Song, Yu; Huang, Tzu-Yung; Badami, Pranav; Gmachl, Claire ^[1]; Bhat, Rajaram; Zah, Chung-En ^[2]

Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08540 (United States)
Corning Incorporated, Corning, New York 14831 (United States)

Publication Date:: Mon Nov 03 00:00:00 EST 2014

OSTI Identifier:: 22310703

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 105; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDES; ORGANOMETALLIC COMPOUNDS; TEMPERATURE RANGE 0065-0273 K

Citation Formats


                    Song, Yu, Huang, Tzu-Yung, Badami, Pranav, Gmachl, Claire, Bhat, Rajaram, and Zah, Chung-En. III-nitride quantum cascade detector grown by metal organic chemical vapor deposition.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4901220.

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                    Song, Yu, Huang, Tzu-Yung, Badami, Pranav, Gmachl, Claire, Bhat, Rajaram, & Zah, Chung-En. III-nitride quantum cascade detector grown by metal organic chemical vapor deposition.  United States.  https://doi.org/10.1063/1.4901220

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                    Song, Yu, Huang, Tzu-Yung, Badami, Pranav, Gmachl, Claire, Bhat, Rajaram, and Zah, Chung-En. 2014.  
        "III-nitride quantum cascade detector grown by metal organic chemical vapor deposition".  United States.  https://doi.org/10.1063/1.4901220.

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@article{osti_22310703,

  title        = {III-nitride quantum cascade detector grown by metal organic chemical vapor deposition},

  author       = {Song, Yu and Huang, Tzu-Yung and Badami, Pranav and Gmachl, Claire and Bhat, Rajaram and Zah, Chung-En},

  abstractNote = {Quantum cascade (QC) detectors in the GaN/Al{sub x}Ga{sub 1−x}N material system grown by metal organic chemical vapor deposition are designed, fabricated, and characterized. Only two material compositions, i.e., GaN as wells and Al{sub 0.5}Ga{sub 0.5}N as barriers are used in the active layers. The QC detectors operates around 4 μm, with a peak responsivity of up to ∼100 μA/W and a detectivity of up to 10{sup 8} Jones at the background limited infrared performance temperature around 140 K.},

  doi          = {10.1063/1.4901220},

  url          = {https://www.osti.gov/biblio/22310703},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 18,

  volume       = 105,

  place        = {United States},

  year         = {Mon Nov 03 00:00:00 EST 2014},

  month        = {Mon Nov 03 00:00:00 EST 2014}

}

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https://doi.org/10.1063/1.4901220

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