III-nitride quantum cascade detector grown by metal organic chemical vapor deposition
- Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08540 (United States)
- Corning Incorporated, Corning, New York 14831 (United States)
Quantum cascade (QC) detectors in the GaN/Al{sub x}Ga{sub 1−x}N material system grown by metal organic chemical vapor deposition are designed, fabricated, and characterized. Only two material compositions, i.e., GaN as wells and Al{sub 0.5}Ga{sub 0.5}N as barriers are used in the active layers. The QC detectors operates around 4 μm, with a peak responsivity of up to ∼100 μA/W and a detectivity of up to 10{sup 8} Jones at the background limited infrared performance temperature around 140 K.
- OSTI ID:
- 22310703
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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